Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface

The fabrication of preamorphized p-type ultrashallow junctions in silicon-on-insulator SOI has been investigated. Electrical and structural measurements after annealing show that boron deactivation and transient enhanced diffusion are reduced in SOI compared to bulk wafers. The reduction is strongest when the end-of-range defects of the preamorphizing implant are located deep within the silicon overlayer of the SOI silicon substrate. Results reveal a very substantial increase in the dissolution rate of the end-of-range defect band. A key player in this effect is the buried Si/SiO2 interface, which acts as an efficient sink for interstitials competing with the silicon surface. © 2006 American Institute of Physics. DOI: 10.1063/1.2240257